Silicon Nitride Si3n4 Ceramic Substrate

Silicon Nitride Si3n4 Ceramic Substrate

Silicon Nitride Si3n4 Ceramic Substrate is a type of advanced material used in many different applications, from electronics to aerospace industries. It has a unique combination of properties that make it one of the most versatile and durable ceramics available. Silicon nitride is an incredibly hard and strong material, making it highly resistant to wear and tear. It has excellent thermal stability, which means it can withstand high temperatures without degrading or losing its properties. Additionally, it is highly electrical insulating, providing excellent insulation and protection to electrical components.

Silicon nitride ceramic substrate is used in various electronic components, such as power semiconductors and light-emitting diodes (LEDs), due to its excellent thermal conductivity and heat dissipation properties. It is also used in mechanical applications, such as high-speed bearings and cutting tools, due to its exceptional strength and toughness. The aerospace industry uses silicon nitride ceramic substrate in high-temperature applications, such as turbine parts, due to its excellent thermal shock resistance and oxidation resistance.

Overall, silicon nitride ceramic substrate is an exceptional material with a wide array of applications. Its durability, thermal stability, electrical insulation, and mechanical strength make it a popular choice in many different industries.

You are welcomed to come to our factory to buy the latest selling, low price, and high-quality Silicon nitride ceramic substrate. Torbo look forward to cooperating with you.

The Torbo®Silicon Nitride Si3n4 Ceramic Substrate

Item:Silicon Nitride Si3n4 Ceramic Substrate

Material:Si3N4

Color:Gray

Thickness:0.25-1mm

Surface processing:Double polished

Bulk density: 3.24g/㎤

Surface roughness Ra: 0.4μm

Bending strength: (3-point method):600-1000Mpa

Modulus of elasticity:310Gpa

Fracture toughness(IF method):6.5 MPa･√m

Thermal conductivity: 25°C 15-85 W/(m･K)

Dielectric loss factor:0.4

Volume resistivity: 25°C >1014 Ω･㎝

Breakdown strength:DC >15㎸/㎜