Silicon Nitride Ceramic Substrate for Electronics
Silicon Nitride Ceramic Substrate for Electronics is a specialized type of ceramic material used in various industrial applications where high strength, durability, and thermal stability are required. It is made of a combination of silicon, nitrogen, and other elements that give it unique mechanical, thermal, and chemical properties.
Si3N4 ceramic substrate has exceptional mechanical strength, making it highly resistant to wear and damage from impact and compression. It is also highly thermal shock-resistant, able to withstand rapid temperature changes without cracking or breaking. This makes it ideal for use in high-temperature industries such as aerospace, automotive engineering, and other areas where heat dissipation is necessary.
In addition to its mechanical and thermal properties, Si3N4 ceramic substrate also offers excellent electrical insulation and good corrosion resistance in harsh environments. It is used in electronics and semiconductor applications such as power modules and high-temperature electronics due to its superior heat dissipation and insulation properties.
Overall, Si3N4 silicon nitride ceramic substrate is an exceptional material with a wide array of applications. Its exceptional mechanical strength, thermal stability, electrical insulation, and chemical resistance make it ideal for various industrial and electronic applications where reliability and efficiency are critical factors.You can rest assured to buy customized Silicon Nitride Ceramic Substrate for Electronics from us. Torbo look forward to cooperating with you, if you want to know more, you can consult us now, we will reply to you in time!
The Torbo® Silicon Nitride Ceramic Substrate for Electronics
Item:Silicon nitride substrate
Surface processing:Double polished
Bulk density: 3.24g/㎤
Surface roughness Ra: 0.4μm
Bending strength: (3-point method):600-1000Mpa
Modulus of elasticity:310Gpa
Fracture toughness(IF method):6.5 MPa･√m
Thermal conductivity: 25°C 15-85 W/(m･K)
Dielectric loss factor:0.4
Volume resistivity: 25°C >1014 Ω･㎝
Breakdown strength:DC >15㎸/㎜