Power electronic substrate

Power electronic substrate

Power electronic substrates are a type of material used in the construction of power electronic components such as power modules, inverters, and converters. They are typically made of ceramics or other high-temperature material that provides a robust, high thermal conductivity, and reliable electrical insulation. These substrates are designed to provide the necessary support and thermal management for power electronic components, allowing them to operate efficiently and reliably.

Power electronic substrates are used in various applications, such as motor drives, renewable energy systems, electric vehicles, and other power electronics applications. They are specially designed to handle high-power applications where thermal management is crucial for efficient operation. For example, high-temperature ceramics such as aluminum nitride (AlN) or silicon carbide can conduct heat up to 10 times better than metals such as copper, which makes them excellent materials for power electronic substrate applications.

In addition to their high-temperature and thermal conductivity properties, power electronic substrates offer excellent electrical insulation, which is essential in power electronics. Electrical insulating materials prevent short circuits and protect against damage from high voltages, ensuring that power electronic components are safe and reliable.

Overall, power electronic substrates are essential materials for the construction of power electronic components. Their high-temperature and thermal conductivity properties, combined with excellent electrical insulation, make them an ideal choice for power electronics applications that require high reliability and efficient thermal management.

The Torbo® Power electronic substrate

Item:Power electronic substrate

Material:Si3N4

Color:Gray

Thickness:0.25-1mm

Surface processing:Double polished

Bulk density: 3.24g/㎤

Surface roughness Ra: 0.4μm

Bending strength: (3-point method):600-1000Mpa

Modulus of elasticity:310Gpa

Fracture toughness(IF method):6.5 MPa･√m

Thermal conductivity: 25°C 15-85 W/(m･K)

Dielectric loss factor:0.4

Volume resistivity: 25°C >1014 Ω･㎝

Breakdown strength:DC >15㎸/㎜