Silicon nitride plate and its manufacturing method

Patent name: Silicon Nitride Substrate and its manufacturing method, and the production method of silicon nitride circuit board and semiconductor module using the silicon nitride plate
Technical field:
The present invention involves Silicon Nitride Substrate and its manufacturing methods. In addition, the invention involves the use of silicon nitride circuit substrates and semiconductor modules using the above Silicon Nitride Substrate.
Background technique:
In recent years, in the fields and other fields of electric vehicles, the power semiconductor module (Power Semiconductor Module) (IGBT, power MOSFET, etc.) that can work with high voltage and large current. For the substrate used in the power semiconductor module, one surface of an insulating ceramic substrate can be used to combine with a metal circuit board, and the ceramic circuit substrate with a metal radiator plate on another surface can be used. In addition, semiconductor elements on the metal circuit board and so on. The combination of the above -mentioned insulating ceramic substrates with metal circuit boards and metal heat sinks, such as the so -called copper -based copper -based copper -based copper -based copper -based copper -based copper -based copper is directly connected to legal. For such a power semiconductor module, the heat dissipation is greater by flowing through large currents. However, because the above -mentioned insulating ceramic substrate is low in terms of thermal conductivity, it may become a factor that hinders the heat dissipation of semiconductor components. In addition, the thermal stress generation is caused by the thermal expansion rate between the insulating ceramic substrate and the metal circuit board and the metal heat sink plate. As a result, the insulating ceramic substrate is cracking and destruction, or the metal circuit board or metal heat dissipation The board is stripped from insulating ceramic substrate.