Item:Silicon nitride substrate
Material:Si3N4
Color:Gray
Thickness:0.25-1mm
Surface processing:Double polished
Bulk density: 3.24g/㎤
Surface roughness Ra: 0.4μm
Bending strength: (3-point method):600-1000Mpa
Modulus of elasticity:310Gpa
Fracture toughness(IF method):6.5 MPa･√m
Thermal conductivity: 25°C 15-85 W/(m･K)
Dielectric loss factor:0.4
Volume resistivity: 25°C >1014 Ω･㎝
Breakdown strength:DC >15㎸/㎜
